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The electrical specifications apply at TA=+25 °C in a 50 Ω system. QFNs are 100% RF tested.

Parameter

Test Conditions

Frequency

Min

Typical

Units

Output P5dB

Power Supply Voltage Vc = 5V

Bias Voltage Vb = 5V

 

1.5 – 20 GHz

 

+22

dBm

 

Input Power for Saturation

 

+12

Small Signal Gain

 

11

 

dB

Input Return Loss

 

16

Output Return Loss

 

17

Reverse Isolation

 

34

Power Dissipated as a Linear Signal Amplifier1

 

525

mW

Power Dissipated as a Saturated LO Driver Amplifier1

 

650

mW

Output IP3 (OIP3)

Power Supply Voltage Vc = 5V

Bias Voltage Vb = 5V

-5 dBm Input power

 

+33

dBm

Input IP3 (IIP3)

 

+21

Noise Figure

 

1.5-5 GHz

 

9.7

dB

5-15 GHz

 

5.4

15-20 GHz

 

6.5

1Power dissipated = DC input power + RF input power – RF output power. Linear signal amplifier operation is with quiescent current and low output power. Saturated LO Driver calculated with recommended input power for saturation.

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APM-7516PSM Amplifier Package Diagram

The APM-7516PSM is a broadband low phase noise driver amplifier designed to provide enough power to drive the LO port of an H or L-diode mixer with a range of input powers. This amplifier uses GaAs HBT technology for low phase noise and provides +18 to 23 dBm output power from 1.5 GHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low and high-power applications. The APM-7516SM shows less variation in current supply under saturation than similar HBT amplifiers, has a lower thermal resistance, and is less sensitive to damage from high input powers. The APM-7516PSM is packaged in a compact 4 mm QFN with integrated blocking capacitors and power supply inductor for surface mount integration on circuit board-based systems.

ModelPackageOrder
APM-7516PSM4x4 mm Surface MountBuy Now
EVB-APM-7516SMConnectorized Evaluation Fixture (EVAL)Buy Now


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