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Specifications

The electrical specifications apply at TA=+25 °C in a 50 Ω system. QFNs are 100% RF tested.

Parameter

Test Conditions

Frequency

Min

Typical

Units

Output P5dB

Power Supply Voltage Vc = 5V

Bias Voltage Vb = 5V

 

1.5 – 20 GHz

 

+22

dBm

 

Input Power for Saturation

 

+12

Small Signal Gain

 

11

 

dB

Input Return Loss

 

16

Output Return Loss

 

17

Reverse Isolation

 

34

Power Dissipated as a Linear Signal Amplifier1

 

525

mW

Power Dissipated as a Saturated LO Driver Amplifier1

 

650

mW

Output IP3 (OIP3)

Power Supply Voltage Vc = 5V

Bias Voltage Vb = 5V

-5 dBm Input power

 

+33

dBm

Input IP3 (IIP3)

 

+21

Noise Figure

 

1.5-5 GHz

 

9.7

dB

5-15 GHz

 

5.4

15-20 GHz

 

6.5

1Power dissipated = DC input power + RF input power – RF output power. Linear signal amplifier operation is with quiescent current and low output power. Saturated LO Driver calculated with recommended input power for saturation.

Packages

Download our 3D models here.
APM-7516PSM Amplifier Package Diagram
APM-7516PSM 1.5-20 GHz Surface Mount Low Phase Noise Amplifier

The APM-7516PSM is a broadband low phase noise driver amplifier designed to provide enough power to drive the LO port of an H or L-diode mixer with a range of input powers. This amplifier uses GaAs HBT technology for low phase noise and provides +18 to 23 dBm output power from 1.5 GHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low and high-power applications. The APM-7516SM shows less variation in current supply under saturation than similar HBT amplifiers, has a lower thermal resistance, and is less sensitive to damage from high input powers. The APM-7516PSM is packaged in a compact 4 mm QFN with integrated blocking capacitors and power supply inductor for surface mount integration on circuit board-based systems.

ModelPackageOrder
APM-7516PSM4x4 mm Surface MountBuy Now
EVB-APM-7516SMConnectorized Evaluation Fixture (EVAL)Buy Now


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