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The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C.  Die are 100% DC tested and RF tested on a per lot basis

Parameter

Test Conditions

Frequency

Min

Typical

Units

5 dB Saturated Output Power

P5dB

5V/5V bias

1 – 3 GHz

 

+23

dBm

3 – 15 GHz

+19

+23

15 – 22 GHz

 

+20

Small Signal Gain

5V/5V bias

-15 dBm Input Power

1 – 3 GHz

 

12

dB

3 – 15 GHz

10

12.5

15 – 22 GHz

 

11

Input Return Loss

1 – 22 GHz

 

18

Output Return Loss

1 – 22 GHz

 

20

Reverse Isolation

1 – 22 GHz

 

34

Noise Figure

5V/5V bias,

-30 dBm Input Power

1 – 22 GHz

 

5.1

Collector Current, Ic

5V/4V

-

 

74

mA

5V/5V

106

5V/6V

141

Current Mirror Current, Ib

5V/4V

4

5V/5V

5

5V/6V

7

Input IP3 (IIP3)

5V/5V

-15 dBm Input Power

1 – 22 GHz

 

+21

dBm

Output IP3 (OIP3)

1 – 22 GHz

 

+33

Output P1dB

5V/5V

1 – 22 GHz

 

+18

Input Power for Saturation

5V/5V

1 – 22 GHz

 

+15

Phase Noise @ 10 kHz Offset

+13 dBm Input power

4 GHz

 

-164

dBc/Hz

Download our 3D models here.
APM-7516PA Amplifier Package Diagram

The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling.  This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz.  This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.

ModelPackageOrder
APM-7516PAPA (Connectorized Module)Buy Now


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