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The electrical specifications apply at TA=+25°C in a 50Ω system.

Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C.  Die are 100% DC tested and RF tested on a per lot basis

Parameter

Test Conditions

Frequency

Min

Typical

Units

Saturated Output Power[1]

8V/7V bias

10 MHz – 20 GHz

19

25

dBm

Small Signal Gain

8V/7V bias,

-15 dBm Input Power

10 MHz – 20 GHz

12

14

dB

Input Return Loss

10 MHz – 20 GHz

 

14

Output Return Loss

10 MHz – 20 GHz

 

20

Reverse Isolation

10 MHz – 20 GHz

 

36

Noise Figure

-30 dBm Input Power

10 MHz – 20 GHz

 

5

Collector Current[2], Ic

8V/6V

-

 

53

mA

8V/7V

-

72

8V/8V

-

96

Current Mirror Current, Ib

8V/6V

-

 

3.4

8V/7V

-

4.2

8V/8V

-

5

Input IP3 (IIP3)

8V/7V bias,

-15 dBm Input Power

 

10 MHz – 20 GHz

 

12

dBm

Output IP3 (OIP3)

10 MHz – 20 GHz

 

24

Output P1dB

8V/7V bias

10 MHz – 20 GHz

 

23

Input Power for Saturation

8V/8V bias

10 MHz – 20 GHz

 

+15

dBm

Phase Noise @ 10 kHz Offset

+12 dBm Input power

1 GHz

 

-167

dBc/Hz



[1] Saturated Output Power specification defined using the APM-7099PA P3dB compression curve shown in section 3.7.

[2] Bias conditions for Ic and Ib tested with no RF input power.  See section 3.7 for DC current vs. RF power.  Bias conditions presented as VC/VB.

Download our 3D models here.
APM-7099 Amplifier Package Diagram

The APM-7099 is a broadband distributed, low phase noise driver amplifier designed to provide a saturated +25 dBm output power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to drive our NLTL multiplier line. It can also provides sufficient power to drive the LO port of an S-diode mixer from 10 MHz to 15 GHz or of an H or L diode mixer from 10 MHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.

ModelPackageOrder
APM-7099CHCH (Chip)Buy Now
APM-7099PAPA (Connectorized Module)Buy Now


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