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The electrical specifications apply at TA=+25°C in a 50Ω system.

Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C.  Die are 100% DC tested and RF tested on a per lot basis

Parameter

Test Conditions

Frequency

Min

Typical

Units

Saturated Output Power[1]

8V/7V bias

500 MHz – 22 GHz

+19

+23

dBm

Small Signal Gain

8V/7V bias,

-25 dBm Input Power

100 MHz – 22 GHz

7

14

dB

Input Return Loss

100 MHz – 22 GHz

 

19

Output Return Loss

100 MHz – 22 GHz

 

13

Reverse Isolation

100 MHz – 22 GHz

 

38

Noise Figure

-

100 MHz – 22 GHz

 

4.6

dB

Collector Current[2], Ic

8V/6V

-

 

35

mA

8V/7V

-

44

8V/8V

-

54

Current Mirror Current, Ib

8V/6V

-

 

3.6

8V/7V

-

4.4

8V/8V

-

5.1

Input IP3 (IIP3)

8V/7V bias,

-20 dBm Input Power

 

100 MHz – 22 GHz

 

+10

dBm

Output IP3 (OIP3)

100 MHz – 22 GHz

 

+24

Output P1dB

8V/7V bias

500 MHz – 22 GHz

 

+18

Input Power for Saturation

8V/7V bias

100 MHz – 22 GHz

 

+10

dBm

Phase Noise @ 10 kHz Offset

+10 dBm Input power

1 GHz

 

-165

dBc/Hz



[1] Saturated Output Power specification defined using the APM-7098PA P7dB compression curve shown in section 3.7.

[2] Bias conditions for Ic and Ib tested with no RF input power.  See section 3.7 for DC current vs. RF power.  Bias conditions presented as VC/VB.

Download our 3D models here.
APM-7098 Amplifier Package Diagram

The APM-7098 is a broadband distributed, low phase noise LO driver amplifier designed to provide a saturated +23 dBm output power with low DC power consumption.  This amplifier uses GaAs HBT technology for low phase noise, and is optimized to provide enough power to drive the LO port of an S-diode mixer from 100 MHz to 18 GHz or of an H or L diode mixer from 100 MHz to 22 GHz.  This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.

ModelPackageOrder
APM-7098CHCH (Chip)Buy Now
APM-7098PAPA (Connectorized Module)Buy Now


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