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The APM-6849 is a single stage broadband, low phase noise LO driver amplifier designed to provide saturated +21 dBm output power. This amplifier uses GaAs HBT technology for low phase noise, and provides industry leading ‑170 dBc/Hz at 10 kHz offset from carrier frequency. The amplifier is also highly efficient with 21% peak PAE at 5 GHz input frequency and low DC current draw. It is optimized to provide enough power to drive the LO port of an S-diode mixer (2 – 20 GHz) and an H/L-diode mixer (2 - 32 GHz).  This amplifier is operational with a variety of bias conditions for both low and high-power applications.


The electrical specifications apply at TA=+25°C in a 50Ω system.

Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C.  Die are 100% DC tested and RF tested on a per lot basis

Parameter

Test Conditions

Frequency

Min

Typical

Units

Psat[1]

5V/5V bias, Input Driver (See footnote)

2 GHz – 20 GHz

+19

+21

dBm

20 GHz – 29 GHz

+17

+19

Small Signal Gain

5V/5V bias,

-25 dBm Input Power

2 GHz – 20 GHz

9

11

dB

20 GHz – 29 GHz

8

10

Input Return Loss

2 GHz – 20 GHz

 

15

20 GHz – 29 GHz

8

Output Return Loss

2 GHz – 20 GHz

 

15

20 GHz – 29 GHz

11

Noise Figure

 

2 GHz – 26.5 GHz

 

5

Reverse Isolation

 

2 GHz-29 GHz

 

41

Collector Current[2], Ic

5V/4V

-

 

13

mA

5V/5V

-

21

5V/6V

-

32

Current Mirror Current, Ib

5V/4V

-

 

1.5

5V/5V

-

2.0

5V/6V

-

2.6

Input IP3 (IIP3)

5V/5V bias,

-15 dBm Input Power

 

2 GHz – 29 GHz

 

+10

dBm



[1] Saturated Output Power tested with two APM-6849PA connected in series; +6 dBm RF input power, corresponding to ~+16 dBm into DUT.

[2] Bias conditions for Ic and Ib tested with no RF input power.  See section 3.6 for DC current vs. RF power.  Bias conditions presented as VC/VB.

Download our 3D models here.
APM-6849 Amplifier Package Diagram

Model

Stock

Price


ModelPackage
APM-6849CHCH (Chip)
APM-6849PAPA (Connectorized Module)


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