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The APM-6848 is an integrated 2-stage broadband, low phase noise LO driver amplifier designed to provide a saturated +20 dBm output power from a 0-5 dBm input power with low DC power consumption.  This amplifier uses GaAs HBT technology for low phase noise, and is optimized to provide enough power to drive the LO port of an S-diode mixer from 2 GHz to 20 GHz or of an H or L diode mixer from 2 GHz to 32 GHz.  This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.


The electrical specifications apply at TA=+25°C in a 50Ω system.

Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C.  Die are 100% DC tested and RF tested on a per lot basis

Parameter

Test Conditions

Frequency

Min

Typical

Units

Saturated Output Power

5V/5V bias, +4 dBm Input Power

2 GHz – 20 GHz

18

+21

dBm

20 GHz – 29 GHz

14

+18

Small Signal Gain

5V/5V bias,

-25 dBm Input Power

2 GHz – 20 GHz

20

23

dB

20 GHz – 29 GHz

16

21

Input Return Loss

2 GHz – 20 GHz

 

11

20 GHz – 29 GHz

9

Output Return Loss

2 GHz – 20 GHz

 

15

20 GHz – 29 GHz

7

Noise Figure

 

2 GHz – 26.5 GHz

 

6

Reverse Isolation

 

2 GHz-29 GHz

 

65

Collector Current[1], Ic

5V/4V

-

 

27

mA

5V/5V

-

43

5V/6V

-

67

Current Mirror Current, Ib

5V/4V

-

 

2.9

5V/5V

-

4

5V/6V

-

5.2

Input IP3 (IIP3)

5V/5V bias,

-25 dBm Input Power

 

2 GHz – 29 GHz

 

+0.5

dBm

Output IP3 (OIP3)

 

2 GHz – 29 GHz

 

+21

Output P1dB

5V/5V bias

2 GHz – 20 GHz

 

+19

20 GHz – 29 GHz

+13

Input Power for Saturation

5V/5V bias

2-29 GHz

 

+4

dBm

Phase Noise @ 10 kHz Offset

5V/5V bias, +9 dBm Input power

 

4 GHz

 

-165

dBc/Hz



[1] Bias conditions for Ic and Ib tested with no RF input power.  See section 3.6 for DC current vs. RF power.  Bias conditions presented as VC/VB.

Download our 3D models here.
APM-6848 Amplifier Package Diagram

Model

Stock

Price


ModelPackage
APM-6848CHCH (Chip)
APM-6848PAPA (Connectorized Module)

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